1. product profile 1.1 general description the blp8g10s-45p and BLP8G10S-45PG are dual path, 45 w ldmos power transistors for base station applications at frequencies from 700 mhz to 1000 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01% probability on ccdf; carrier spacing = 5 mhz; per section unless otherwise specified. 1.2 features and benefits ? high efficiency ? excellent ruggedness ? designed for broadband operation (700 mhz to 1000 mhz) ? excellent thermal stability ? high power gain ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? w-cdma ? lte ? gsm blp8g10s-45p; BLP8G10S-45PG power ldmos transistor rev. 1 ? 25 july 2013 product data sheet table 1. application performance typical rf performance at t case = 25 ? c; i dq = 224 ma in common source class-ab production circuit. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 960 28 2.5 20.8 19.8 ? 49 [1]
blp8g10s-45p_8g10s-45pg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 25 july 2013 2 of 13 nxp semiconductors blp8g10s-45p; BLP8G10S-45PG power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. table 2. pinning pin description simplified outline graphic symbol blp8g10s-45p (sot1223-1) 1drain 1 2drain 2 3 gate 2 4 gate 1 5source [1] BLP8G10S-45PG (sot1224-1) 1drain 1 2drain 2 3 gate 2 4 gate 1 5source [1] s l q l q g h [ d d d s l q l q g h [ d d d table 3. ordering information type number package name description version blp8g10s-45p hsop4f plastic, heatsink small outline package; 4 leads (flat) sot1223-1 BLP8G10S-45PG hsop4 plastic, heatsink sm all outline package; 4 leads sot1224-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c t case case temperature [1] - 150 ?c
blp8g10s-45p_8g10s-45pg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 25 july 2013 3 of 13 nxp semiconductors blp8g10s-45p; BLP8G10S-45PG power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blp8g10s-45p and BLP8G10S-45PG are ca pable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 28 v; i dq =224 ma; p l = 25 w; f = 728 mhz. table 5. thermal characteristics values specified for entire device. symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =85 ?c; p l =5w 0.85 k/w table 6. dc characteristics t case =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.4ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 40 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -7.3-a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d =2 a - 3.0 - s r ds(on) drain-source on-state resistance v ds =10v; i d =1.4a v gs =v gs(th) + 3.75 v -500-m ? table 7. rf characteristics test signal: 2-carrier w-cdma; par 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 1-64 dpch; f 1 = 952.5 mhz; f 2 = 957.5 mhz; rf performance at v ds =28v; i dq = 224 ma; t case =25 ? c; per section in a class-ab production circuit unless otherwise specified. symbol parameter conditions min typ max unit g p power gain p l = 2.5 w 20 20.8 - db rl in input return loss p l =2.5w - ? 18 ? 9db ? d drain efficiency p l = 2.5 w 18 19.8 - % acpr adjacent channel power ratio p l =2.5w - ? 49 ? 43 dbc
blp8g10s-45p_8g10s-45pg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 25 july 2013 4 of 13 nxp semiconductors blp8g10s-45p; BLP8G10S-45PG power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . [2] z l is selected for maximum efficiency. table 8. typical impedance blp8g10s-45p measured load-pull data. typical values per section unless otherwise specified. f z s [1] z l [1] [2] (mhz) (? ) (? ) blp8g10s-45p 720 11.6 ? j12.9 5.44 + j6.34 746 14.8 ? j9.2 4.51 + j6.03 757 15.3 ? j4.6 4.23 + j6.15 791 13.3 ? j1.6 3.99 + j5.62 820 6.5 ? j1.1 3.87 + j5.37 869 5.2 ? j2.4 4.25 + j4.49 894 4.4 ? j3.0 3.69 + j4.89 925 3.8 ? j3.9 3.49 + j4.72 942 3.6 ? j4.2 3.06 + j4.46 960 3.6 ? j4.7 3.29 + j4.04 BLP8G10S-45PG 720 13.2 ? j7.7 4.34 + j5.10 746 11.8 ? j4.6 4.58 + j4.94 757 10.4 ? j3.7 4.50 + j5.34 791 9.8 ? j2.5 4.19 + j4.87 869 5.0 ? j4.0 4.27 + j3.42 881 4.6 ? j4.2 3.62 + j3.45 894 4.2 ? j4.7 3.77 + j3.29 925 3.8 ? j5.6 3.60 + j3.15 942 3.7 ? j5.8 3.29 + j2.89 961 3.6 ? j6.4 3.36 + j2.47 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate
blp8g10s-45p_8g10s-45pg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 25 july 2013 5 of 13 nxp semiconductors blp8g10s-45p; BLP8G10S-45PG power ldmos transistor 7.3 test circuit see table 9 for a list of components. fig 2. component layout for class-ab production test circuit table 9. list of components for test circuit see figure 2 . component description value remarks c11, c21, c32, c42 multilayer ceramic chip capacitor 10 ? f, 5 0 v c12, c22, c33, c43 multilaye r ceramic chip capacitor 1 ? f, 5 0 v c13, c23, c34, c44 multilayer ceramic chip capacitor 43 pf atc100b c14, c24, c36, c46 multilayer ceramic chip capacitor 43 pf atc100a c31, c41 electrolytic capacitor 220 ? f, 6 3 v c35, c45 multilayer ceramic chip capacitor 3.3 pf atc100b r11, r21 chip resistor 10 ? multi comp smd 1206 s1 socket - johnstech d d d p p p p & |